The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Mar. 19, 2009
Youseok Suh, Cupertino, CA (US);
Ya-fen Lin, Saratoga, CA (US);
Coling Stewart Bill, Cupertino, CA (US);
Takao Akaogi, Cupertino, CA (US);
Yi-ching Wu, San Jose, CA (US);
Youseok Suh, Cupertino, CA (US);
Ya-Fen Lin, Saratoga, CA (US);
Coling Stewart Bill, Cupertino, CA (US);
Takao Akaogi, Cupertino, CA (US);
Yi-Ching Wu, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method for partial local self-boosting of a memory cell channel is disclosed. As a part of memory cell channel partial local self-boosting, an isolating memory cell located on a source side of a program inhibited memory cell is turned off and a gating memory cell located on a drain side of the program inhibited memory cell is used to pass a pre-charge voltage to the program inhibited memory cell to provide a pre-charge voltage to a channel of the program inhibited memory cell. Moreover, a pre-charge voltage is passed to a buffering memory cell located on the source side of the program inhibited memory cell to provide a pre-charge voltage to a channel of the buffering memory cell and the gating memory cell that is located on the drain side of the program inhibited memory cell is turned off. During programming, a program voltage is applied to the gate of the program inhibited memory cell where a channel voltage of the program inhibited memory cell is raised above a level raised by the pre-charge voltage.