The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jul. 11, 2008
Wen-yaung Lee, San Jose, CA (US);
Jinshan LI, San Jose, CA (US);
Daniele Mauri, San Jose, CA (US);
Koichi Nishioka, Kanagawa-ken, JP;
Yasunari Tajima, Kanagawa-ken, JP;
Wen-Yaung Lee, San Jose, CA (US);
Jinshan Li, San Jose, CA (US);
Daniele Mauri, San Jose, CA (US);
Koichi Nishioka, Kanagawa-ken, JP;
Yasunari Tajima, Kanagawa-ken, JP;
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.