The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jan. 27, 2005
Dirk Jan Broer, Eindhoven, NL;
Christiane Maria Rosette DE Witz, Eindhoven, NL;
Grietje Neeltje Mol, Eindhoven, NL;
Roel Penterman, Eindhoven, NL;
Dirk Jan Broer, Eindhoven, NL;
Christiane Maria Rosette De Witz, Eindhoven, NL;
Grietje Neeltje Mol, Eindhoven, NL;
Roel Penterman, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A mechanical structure comprises an element which is moveable by nonmechanical means, such as heat or radiation, between a first state having a first shape and a second state having a second shape different. To this end, the element includes a layer of oriented polymerized liquid crystal which exhibits an anisotropic expansion when subjected to such means. In order to facilitate manufacture the element is positioned on a substrate which has a region of high adhesiveness and a region of low adhesiveness for polymerized liquid crystal. To manufacture such structures a layer of oriented polymerizable liquid crystal is formed on a substrate () which is provided with a patterned surface that provides adhesive regions () with high adhesiveness to polymerized liquid crystal and nonadhesive regions () with low adhesiveness to polymerized liquid crystal. After polymerization, for example a thermal shock is applied which causes the layer of polymerized liquid crystal to delaminate at the non-adhering region while remaining fixed to the adhesive regions. Thus, the method does not require time-consuming under-etching steps.