The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Jan. 17, 2008
Applicants:

Hiroo Fuma, Gifu, JP;

Hiromichi Kuno, Nishikamo-gun, JP;

Satoshi Hirose, Nishikamo-gun, JP;

Naoyoshi Takamatsu, Susono, JP;

Inventors:

Hiroo Fuma, Gifu, JP;

Hiromichi Kuno, Nishikamo-gun, JP;

Satoshi Hirose, Nishikamo-gun, JP;

Naoyoshi Takamatsu, Susono, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element () such as an IGBT and another element () to be paired are connected, the element () is driven by a driver (), and a gate voltage is controlled by a control circuit (). When the power semiconductor element is turned off, a comparator () detects that a voltage (Vak) of the element () is a prescribed voltage, the control circuit () switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit () switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.


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