The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
May. 08, 2009
Tadayoshi Watanabe, Kanagawa-ken, JP;
Yumi Hayashi, Kanagawa-ken, JP;
Takamasa Usui, Selkirk, NY (US);
Tadayoshi Watanabe, Kanagawa-ken, JP;
Yumi Hayashi, Kanagawa-ken, JP;
Takamasa Usui, Selkirk, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer.