The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Mar. 22, 2006
Applicant:

Katsuyuki Torii, Saitama, JP;

Inventor:

Katsuyuki Torii, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A reliable semiconductor device is provided which comprises lower and upper IGBTsandpreferably bonded to each other by solder, and a wire strongly connected to lower IGBT. The semiconductor device comprises a lower IGBT, a lower electrode layersecured on lower IGBT, an upper electrode layersecured on lower electrode layer, an upper IGBTsecured on upper electrode layer, and a solder layerwhich connects upper electrode layerand upper IGBT. Lower and upper electrode layersandare formed of different materials from each other, and upper electrode layerhas a notchto partly define on an upper surfaceof lower electrode layera bonding regionexposed to the outside through notchso that one end of a wireis connected to bonding region. Upper electrode layercan be formed of one material superior in soldering, and also, lower electrode layercan be formed of another material having a high adhesive strength to wire


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