The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Apr. 24, 2006
Hiroshi Sugimoto, Chiyoda-ku, JP;
Yoshinori Matsuno, Chiyoda-ku, JP;
Kenichi Ohtsuka, Chiyoda-ku, JP;
Noboru Mikami, Chiyoda-ku, JP;
Kenichi Kuroda, Chiyoda-ku, JP;
Hiroshi Sugimoto, Chiyoda-ku, JP;
Yoshinori Matsuno, Chiyoda-ku, JP;
Kenichi Ohtsuka, Chiyoda-ku, JP;
Noboru Mikami, Chiyoda-ku, JP;
Kenichi Kuroda, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
On a major surface of an n-type silicon carbide inclined substrate () is formed an n-type voltage-blocking layer () made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer () is formed a p-type silicon carbide region () rectangular when viewed from above. On the surface of the p-type silicon carbide region () is formed a p-type contact electrode (). In the p-type silicon carbide region (), the periphery of the p-type silicon carbide region () that is parallel with a (11-20) plane () of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.