The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Oct. 12, 2007
Toshiyuki Takewaki, Kanagawa, JP;
Noriaki Oda, Kanagawa, JP;
Yorinobu Kunimune, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film, a TiN filmand a pad metal filmare formed in this sequence on the upper surface of a Cu interconnect. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer, and thereafter a polyimide filmis formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film, and finally a solder ballis joined thereto.