The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jan. 07, 2009
Nam-jung Kang, Suwon-si, KR;
Jae-hoon Song, Anyang-si, KR;
So-hyun Ryu, Seoul, KR;
Dong-kwan Yang, Yongin-si, KR;
Nam-Jung Kang, Suwon-si, KR;
Jae-Hoon Song, Anyang-si, KR;
So-Hyun Ryu, Seoul, KR;
Dong-Kwan Yang, Yongin-si, KR;
Abstract
In a method of forming a contact hole and a method of manufacturing a semiconductor device having the same, a first insulation interlayer is formed on a substrate. A dummy pattern is formed on the first insulation interlayer. A second insulation interlayer is formed to cover the dummy pattern. A photoresist pattern is formed on the second insulation interlayer. The photoresist pattern has an exposed portion. The dummy pattern under the photoresist pattern is arranged to cross over the exposed portion of the photoresist pattern. The first and second insulation interlayers are etched using the photoresist pattern and the dummy pattern as an etching mask, to form a plurality of contact holes on both sides of the dummy pattern. Accordingly, the contact holes may be formed to have a smaller width.