The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Jul. 28, 2005
Edmund G. Seebauer, Urbana, IL (US);
Richard D. Braatz, Urbana, IL (US);
Michael Yoo Lim Jung, Minneapolis, MN (US);
Rudiyanto Gunawan, Goleta, CA (US);
Edmund G. Seebauer, Urbana, IL (US);
Richard D. Braatz, Urbana, IL (US);
Michael Yoo Lim Jung, Minneapolis, MN (US);
Rudiyanto Gunawan, Goleta, CA (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.