The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
May. 25, 2007
Applicants:
Jamal Ramdani, Scarborough, ME (US);
Mingwei Xu, South Portland, ME (US);
Inventors:
Jamal Ramdani, Scarborough, ME (US);
Mingwei Xu, South Portland, ME (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system and method are disclosed for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture. The transistor of the present invention comprises a non-selective epitaxial growth (NSEG) collector, an NSEG base, an NSEG emitter and a raised external base that is formed by the selective epitaxial growth (SEG) of a doped polysilicon layer.