The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Oct. 30, 2007
Applicants:

Hong Yeol Lee, Daejeon, KR;

Seung Eon Moon, Daejeon, KR;

Eun Kyoung Kim, Daejeon, KR;

Jong Hyurk Park, Daejeon, KR;

Kang Ho Park, Daejeon, KR;

Jong Dae Kim, Daejeon, KR;

Gyu Tae Kim, Seoul, KR;

Jae Woo Lee, Seoul, KR;

Hye Yeon Ryu, Seoul, KR;

Jung Hwan Huh, Seoul, KR;

Inventors:

Hong Yeol Lee, Daejeon, KR;

Seung Eon Moon, Daejeon, KR;

Eun Kyoung Kim, Daejeon, KR;

Jong Hyurk Park, Daejeon, KR;

Kang Ho Park, Daejeon, KR;

Jong Dae Kim, Daejeon, KR;

Gyu Tae Kim, Seoul, KR;

Jae Woo Lee, Seoul, KR;

Hye Yeon Ryu, Seoul, KR;

Jung Hwan Huh, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.


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