The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Feb. 13, 2007
Applicants:

Hiroaki Yoshida, Yokohama, JP;

Isamu Yanase, Yokohama, JP;

Tomio Ono, Yokohama, JP;

Naoshi Sakuma, Yokohama, JP;

Mariko Suzuki, Yokohama, JP;

Tadashi Sakai, Yokohama, JP;

Inventors:

Hiroaki Yoshida, Yokohama, JP;

Isamu Yanase, Yokohama, JP;

Tomio Ono, Yokohama, JP;

Naoshi Sakuma, Yokohama, JP;

Mariko Suzuki, Yokohama, JP;

Tadashi Sakai, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.


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