The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2010

Filed:

Nov. 20, 2007
Applicants:

Lyn M. Irving, Rochester, NY (US);

David H. Levy, Rochester, NY (US);

Diane C. Freeman, Pittsford, NY (US);

Cheng Yang, Pittsford, NY (US);

Peter J. Cowdery-corvan, Webster, NY (US);

Inventors:

Lyn M. Irving, Rochester, NY (US);

David H. Levy, Rochester, NY (US);

Diane C. Freeman, Pittsford, NY (US);

Cheng Yang, Pittsford, NY (US);

Peter J. Cowdery-Corvan, Webster, NY (US);

Assignee:

Eastman Kodak Company, Rochester, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
Abstract

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.


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