The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Sep. 25, 2007
Motonori Ishii, Osaka, JP;
Kazutoshi Onozawa, Osaka, JP;
Kimiaki Toshikiyo, Osaka, JP;
Toshinobu Matsuno, Kyoto, JP;
Takanori Yogo, Kyoto, JP;
Motonori Ishii, Osaka, JP;
Kazutoshi Onozawa, Osaka, JP;
Kimiaki Toshikiyo, Osaka, JP;
Toshinobu Matsuno, Kyoto, JP;
Takanori Yogo, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.