The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Feb. 25, 2009
Toru Takayama, Hyogo, JP;
Hiroki Nagai, Hyogo, JP;
Hitoshi Sato, Okayama, JP;
Tomoya Satoh, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Toru Takayama, Hyogo, JP;
Hiroki Nagai, Hyogo, JP;
Hitoshi Sato, Okayama, JP;
Tomoya Satoh, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction, the relations of W>Wand 80 μm≧W≧60 μm are satisfied.