The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Aug. 29, 2007
Masamichi Yamanishi, Hamamatsu, JP;
Tadataka Edamura, Hamamatsu, JP;
Naota Akikusa, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Masamichi Yamanishi, Hamamatsu, JP;
Tadataka Edamura, Hamamatsu, JP;
Naota Akikusa, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structureseach of which includes a quantum well light emitting layerand an injection layer. The unit laminate structurehas, in its subband level structure, an emission upper level, an emission lower level, and an injection levelas an energy level higher than the emission upper level, and light hν is generated by means of intersubband transition of electrons from the levelto the levelin the light emitting layer, and electrons through the intersubband transition are injected into the injection level in a unit laminate structure of the subsequent stage via the injection layer, and from this injection level, electrons are supplied to the emission upper level. Thereby, a quantum cascade laser which realizes operation with a high output at a high temperature is realized.