The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Nov. 05, 2008
Cang Ji, Kirchheim/Teck-Nabern, DE;
Cang Ji, Kirchheim/Teck-Nabern, DE;
Dialog Semiconductor GmbH, Kirchheim/Teck-Nabern, DE;
Abstract
An integrated circuit for a charge pump with a charge stage and a pump stage and a single High-Voltage PMOS (HVPMOS) transistor as the main switch for each stage and two times two minimum HVPMOS transistors in series as a bulk switch with fixed bulk connections, where the minimum HVPMOS transistors are smaller sized transistors than the transistors of the main switch. The bulk of the main switch is switched synchronously to the voltage node of the HVPMOS transistor of the main switch to force the bulk voltage (V) to be equal or larger than either the source voltage (V) or the drain voltage (V). Two non-overlapping clock signals are used to trigger the HVPMOS transistors of the charge and pump stage.