The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2010

Filed:

Apr. 14, 2004
Applicants:

Vaishnav Srinivas, San Diego, CA (US);

Vivek Mohan, San Diego, CA (US);

Inventors:

Vaishnav Srinivas, San Diego, CA (US);

Vivek Mohan, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A break-before-make predriver for disabling a PFET of an output driver before enabling an NFET, and vice versa. The predriver includes an input inverter, two cross-coupled inverters, and output buffers. The predriver provides enhanced break-before-make action through sizing the NFETs larger than the PFETs in the predriver's cross-coupled inverters. The input inverter, the cross-coupled inverters and the first and second output buffers are sized with respect to each other such that substantially equal break before make action is provided on both rising and falling edges. The predriver also includes level-shifting capabilities through a different voltage supply at the PFETs of the cross-coupled inverter. The predriver also includes two data output nodes for connection to the two inputs of an output driver. The predriver provides for tristate action by disabling the signal from the predriver output nodes.


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