Capacitor having upper electrode not formed over device isolation region

Abstract

The semiconductor device comprises a device isolation regionformed in a semiconductor substratea lower electrodeformed in a device regiondefined by the device isolation region and formed of an impurity diffused layer, a dielectric filmof a thermal oxide film formed on the lower electrode, an upper electrodeformed on the dielectric film, an insulation layerformed on the semiconductor substrate, covering the upper electrode, a first conductor plugburied in a first contact holeformed down to the lower electrode, and a second conductor plugburied in a second contact holeformed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrodeis not formed in the device isolation regionwhereby the short-circuit between the upper electrodeand the lower electrodein the cavity can be prevented. Thus, a capacitor of high reliability can be provided.