The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Aug. 25, 2004
Makoto Yasuda, Kawasaki, JP;
Akiyoshi Watanabe, Kawasaki, JP;
Yoshihiro Matsuoka, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
The semiconductor device comprises a device isolation regionformed in a semiconductor substratea lower electrodeformed in a device regiondefined by the device isolation region and formed of an impurity diffused layer, a dielectric filmof a thermal oxide film formed on the lower electrode, an upper electrodeformed on the dielectric film, an insulation layerformed on the semiconductor substrate, covering the upper electrode, a first conductor plugburied in a first contact holeformed down to the lower electrode, and a second conductor plugburied in a second contact holeformed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrodeis not formed in the device isolation regionwhereby the short-circuit between the upper electrodeand the lower electrodein the cavity can be prevented. Thus, a capacitor of high reliability can be provided.