The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Jan. 26, 2009
Hubert Benzel, Pliezhausen, DE;
Frank Schaefer, Tuebingen, DE;
Simon Armbruster, Reutlingen, DE;
Gerhard Lammel, Tuebingen, DE;
Christoph Schelling, Reutlingen, DE;
Joerg Brasas, Walddorfhaeslach, DE;
Hubert Benzel, Pliezhausen, DE;
Frank Schaefer, Tuebingen, DE;
Simon Armbruster, Reutlingen, DE;
Gerhard Lammel, Tuebingen, DE;
Christoph Schelling, Reutlingen, DE;
Joerg Brasas, Walddorfhaeslach, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.