The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Jun. 29, 2007
Mitsuhiro Yoshimura, Gunma, JP;
Hiroko Inomata, Gunma, JP;
Mitsuhiro Yoshimura, Gunma, JP;
Hiroko Inomata, Gunma, JP;
Sanyo Electric Co., Ltd, Osaka, JP;
Abstract
An insulated gate semiconductor device includes a one conductivity type semiconductor layer, a first operation part in a surface of the semiconductor layer and a second operation part in the surface of the semiconductor layer that is smaller in area than the first operation part. A first channel region and a first transistor of an opposite conductivity type are provided in the first operation part and a second channel region and a second transistor of the opposite conductivity type are provided in the second operation part. The first operation part is disposed around the second operation part. Accordingly, design rules for four corner portions can be made uniform and depletion layer spreading in corner portions at a peripheral edge of a channel region of an operation part in application of a reverse voltage is also made approximately uniform. Thus, stable VDSS breakdown voltage characteristics can be obtained.