The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Jun. 19, 2008
Shoko Kikuchi, Kawasaki, JP;
Akira Takashima, Fuchu, JP;
Naoki Yasuda, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Shoko Kikuchi, Kawasaki, JP;
Akira Takashima, Fuchu, JP;
Naoki Yasuda, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.