The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
May. 16, 2007
Sung-il Cho, Yongin-si, KR;
Choong-rae Cho, Yongin-si, KR;
Eun-hong Lee, Yongin-si, KR;
In-kyeong Yoo, Yongin-si, KR;
Sung-Il Cho, Yongin-si, KR;
Choong-rae Cho, Yongin-si, KR;
Eun-hong Lee, Yongin-si, KR;
In-kyeong Yoo, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.