The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Feb. 25, 2009
Hiroyoshi Kudou, Kanagawa, JP;
Satoshi Uchiya, Kanagawa, JP;
Junichi Yamamoto, Kanagawa, JP;
Fumiaki Futamura, Kanagawa, JP;
Hiroyoshi Kudou, Kanagawa, JP;
Satoshi Uchiya, Kanagawa, JP;
Junichi Yamamoto, Kanagawa, JP;
Fumiaki Futamura, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, KP;
Abstract
A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N-type.