The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Feb. 05, 2009
Applicants:
Zhiwei Liu, Orlando, FL (US);
Juin J. Liou, Oviedo, FL (US);
James E. Vinson, Palm Bay, FL (US);
Inventors:
Assignees:
Intersil Americas Inc., Milpitas, CA (US);
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon-controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.