The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Dec. 11, 2006
Applicants:
Susumu Ohmi, Mihara, JP;
Kunihiro Takatani, Nara, JP;
Fumio Yamashita, Nara, JP;
Mototaka Taneya, Higashihiroshima, JP;
Inventors:
Susumu Ohmi, Mihara, JP;
Kunihiro Takatani, Nara, JP;
Fumio Yamashita, Nara, JP;
Mototaka Taneya, Higashihiroshima, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.