The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Dec. 07, 2007
Applicants:
Deok-hyung Lee, Seoul, KR;
Sun-ghil Lee, Yongin-si, KR;
Jong-ryeol Yoo, Osan-si, KR;
Si-young Choi, Seongnam-si, KR;
Inventors:
Deok-Hyung Lee, Seoul, KR;
Sun-Ghil Lee, Yongin-si, KR;
Jong-Ryeol Yoo, Osan-si, KR;
Si-Young Choi, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.