The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Oct. 25, 2005
Toru Ikeda, Yokohama, JP;
Takahiro Mashimo, Yokohama, JP;
Eiji Shidoji, Yokohama, JP;
Toshihisa Kamiyama, Takasago, JP;
Yoshihito Katayama, Yokohama, JP;
Toru Ikeda, Yokohama, JP;
Takahiro Mashimo, Yokohama, JP;
Eiji Shidoji, Yokohama, JP;
Toshihisa Kamiyama, Takasago, JP;
Yoshihito Katayama, Yokohama, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Abstract
The invention provides a method for producing a silicon oxide film, whereby a film having uniform optical constants such as refractive index, absorption coefficient, etc. can be formed continuously at a high deposition rate. A method for producing a silicon oxide film, which comprises depositing a silicon oxide film on a substrate by carrying out AC sputtering by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95, in an atmosphere containing an oxidizing gas, with an alternating current having a frequency of from 1 to 1,000 kHz.