The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Mar. 20, 2006
Andrew John Whitehead, Camberley, Surrey, GB;
Christopher John Howard Wort, Wantage, Oxfordshire, GB;
Geoffrey Alan Scarsbrook, Sunninghill, Ascot, Berkshire, GB;
Andrew John Whitehead, Camberley, Surrey, GB;
Christopher John Howard Wort, Wantage, Oxfordshire, GB;
Geoffrey Alan Scarsbrook, Sunninghill, Ascot, Berkshire, GB;
Other;
Abstract
The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.