The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Jan. 13, 2009
Applicants:

Tomoki Higashi, Yokohama, JP;

Takashi Ohsawa, Yokohama, JP;

Inventors:

Tomoki Higashi, Yokohama, JP;

Takashi Ohsawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory including; cells, wherein a refresh operation includes a first refresh and a second refresh, in the first refresh, a first potential higher than a gate potential in a retention is applied to the gate in a state having a source potential applied to the drain, and thereafter the gate potential in the retention is applied to the gate, thereby a first current passes to the cell, and in the second refresh, a second potential higher than a gate potential in the retention is applied to the gate, and a third potential higher than the gate potential in the retention is applied to the drain, thereby a second current passes to the cell, and a state of the cell is shifted to an equilibrium state in which amounts of the first and the second currents flowing during one cycle becomes substantially equal.


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