The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Mar. 21, 2008
In-sung Joe, Seoul, KR;
Young-gu Jin, Hwaseong-si-si, KR;
Jae-woong Hyun, Uijeongbu-si-si, KR;
Yoon-dong Park, Yongin-si-si, KR;
In-sung Joe, Seoul, KR;
Young-gu Jin, Hwaseong-si-si, KR;
Jae-woong Hyun, Uijeongbu-si-si, KR;
Yoon-dong Park, Yongin-si-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.