The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Mar. 19, 2009
Applicants:

Daisuke Kurose, Kawasaki, JP;

Masanori Furuta, Mishima, JP;

Tsutomu Sugawara, Kawasaki, JP;

Inventors:

Daisuke Kurose, Kawasaki, JP;

Masanori Furuta, Mishima, JP;

Tsutomu Sugawara, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word lines and the bit lines, a read current source which supplies a read current to the MRAM cells in a read mode, a sense amplifier which detects terminal voltages of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit which latches the detection output signal to output read data, and a data write circuit which supplies a write current to the MRAM cells depending on write data in a write mode to perform writing and which supplies the write current to the MRAM cells depending on the read data in the read mode to perform rewriting.


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