The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 16, 2007
Kazumi Kamai, Ishikawa-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Eiji Umetsu, Niigata-ken, JP;
Kazuaki Ikarashi, Niigata-ken, JP;
Kazumi Kamai, Ishikawa-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Eiji Umetsu, Niigata-ken, JP;
Kazuaki Ikarashi, Niigata-ken, JP;
TDK Corporation, Tokyo, JP;
Abstract
A tunnel-type magnetic detecting device is provided. The tunnel-type magnetic detecting device is capable of stably reducing the surface roughness of an insulating barrier layer, and capable of properly improving an MR effect typified by a resistance changing rate. A seed layer is formed in a laminated structure of an NiFeCr layer and an Al layer. This makes it possible to stably reduce the surface roughness of the insulating barrier layer as compared with a related art in which a seed layer is formed in a single-layer structure of an NiFeCr layer. Accordingly, according to the tunnel-type magnetic detecting device of the invention, the MR property typified by an excellent resistance changing rate (ΔR/R) can be obtained stably.