The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jul. 12, 2007
Dima Prikhodko, Woburn, MA (US);
Gene A. Tkachenko, Belmont, MA (US);
Richard A. Carter, Hampton, NH (US);
Sergey Nabokin, Pelham, NH (US);
Jason Chiesa, Pelham, NH (US);
Steven C. Sprinkle, Hampstead, NH (US);
Yu Zhu, Wellesley, MA (US);
Beverly A. Peluso, Wilmington, MA (US);
Dima Prikhodko, Woburn, MA (US);
Gene A. Tkachenko, Belmont, MA (US);
Richard A. Carter, Hampton, NH (US);
Sergey Nabokin, Pelham, NH (US);
Jason Chiesa, Pelham, NH (US);
Steven C. Sprinkle, Hampstead, NH (US);
Yu Zhu, Wellesley, MA (US);
Beverly A. Peluso, Wilmington, MA (US);
Skyworks Solutions, Inc., Woburn, MA (US);
Abstract
According to one exemplary embodiment, a switching module includes a first harmonic phase tuning filter coupled to a first input of an RF switch. The first harmonic phase tuning filter is configured to provide an output impedance that substantially matches an input impedance of the RF switch at approximately a fundamental frequency and to provide a high impedance at approximately a harmonic frequency generated by the RF switch. The first harmonic phase tuning filter includes an LC circuit coupled between input and output terminals of the first harmonic phase tuning filter and tuned to provide the high impedance at approximately the harmonic frequency generated by the RF switch. The RF switching module further includes a second harmonic phase tuning filter coupled to a second input of the RF switch. The first and second harmonic phase tuning filters can be fabricated on a single semiconductor die.