The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Oct. 03, 2007
Gilberto Curatola, Korbek-Lo, BE;
Prabhat Agarwal, Brussels, BE;
Jan W. Slotboom, Eersel, NL;
Godefridus A. M. Hurkx, Best, NL;
Radu Surdeanu, Roosbeek, BE;
Gerben Doornbos, Heverlee, BE;
Gilberto Curatola, Korbek-Lo, BE;
Prabhat Agarwal, Brussels, BE;
Jan W. Slotboom, Eersel, NL;
Godefridus A. M. Hurkx, Best, NL;
Radu Surdeanu, Roosbeek, BE;
Gerben Doornbos, Heverlee, BE;
NXP B.V., Eindhoven, NL;
Abstract
A tunnel transistor includes source diffusion () of opposite conductivity type to a drain diffusion () so that a depletion layer is formed between source and drain diffusions in a lower doped region (). An insulated gate () controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer () which is made of a different material to the lower layer () and cap layer ().