The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Aug. 30, 2006
Applicants:

Masaaki Abe, Chino, JP;

Hidehiko Yajima, Suwa, JP;

Takemi Yonezawa, Fujimi, JP;

Fumikazu Komatsu, Okaya, JP;

Mitsuaki Sawada, Suwa, JP;

Inventors:

Masaaki Abe, Chino, JP;

Hidehiko Yajima, Suwa, JP;

Takemi Yonezawa, Fujimi, JP;

Fumikazu Komatsu, Okaya, JP;

Mitsuaki Sawada, Suwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit device includes a high-speed I/F circuit block which transfers data through a serial bus, and a driver logic circuit block which generates a display control signal. A first-conductivity-type transistor included in the high-speed I/F circuit block is formed in a second-conductivity-type well, and a second-conductivity-type transistor included in the high-speed I/F circuit block is formed in a first-conductivity-type well formed in a second-conductivity-type substrate to enclose the second-conductivity-type well. A first-conductivity-type transistor and a second-conductivity-type transistor included in the driver logic circuit block are formed in a region other than a region of the first-conductivity-type well for the high-speed interface circuit block.


Find Patent Forward Citations

Loading…