The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Apr. 17, 2009
Shang-hui Tu, Tainan, TW;
Hung-shern Tsai, Tainan County, TW;
Shang-Hui Tu, Tainan, TW;
Hung-Shern Tsai, Tainan County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
High voltage semiconductor devices with Schottky diodes are presented. A high voltage semiconductor device includes an LDMOS device and a Schottky diode device. The LDMOS device includes a semiconductor substrate, a P-body region in a first region of the substrate, and an N-drift region in the second region of the substrate with a junction therebetween. A patterned isolation region defines an active region. An anode electrode is disposed on the P-body region. An N-doped region is disposed in the N-drift region. A cathode electrode is disposed on the N-doped region. The Schottky diode includes an N-drift region on the semiconductor substrate. The anode electrode is disposed on the N-drift region at the first region of the substrate. The N-doped region is disposed on the N-drift region at the second region of the substrate. The cathode electrode is disposed on the N-doped region.