The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Jan. 07, 2010
Applicants:

Yong-il Kim, Gyeonggi-do, KR;

Min-hee Cho, Gyeonggi-do, KR;

Inventors:

Yong-il Kim, Gyeonggi-do, KR;

Min-Hee Cho, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having a recessed active edge is provided. The semiconductor devices include an isolation layer disposed in a substrate to define an active region. A gate electrode is disposed to cross over the active region. A source region and a drain region are disposed in the active region on both sides of the gate electrode. A recessed region is disposed under the gate electrode and on an edge of the active region adjacent to the isolation layer. A bottom of the recessed region may be sloped down toward the isolation layer. The gate electrode may further extend into and fill the recessed region. That is, a gate extension may be disposed in the recessed region. A method of fabricating the semiconductor device is also provided.


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