The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jun. 25, 2007
Applicants:
Jyh-shin Chen, Hsin-Chu, TW;
Liang-chiun Chao, Taipei, TW;
Sheng-yuan Chen, Hsin-Chu, TW;
Hsiao-yu Chou, Hsin-Chu, TW;
Inventors:
Jyh-Shin Chen, Hsin-Chu, TW;
Liang-Chiun Chao, Taipei, TW;
Sheng-Yuan Chen, Hsin-Chu, TW;
Hsiao-Yu Chou, Hsin-Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method and an apparatus for producing a two-dimensional patterned beam, e.g. a two-dimensional patterned and focused ion beam, for fabricating a nano-structure on a substrate with the precursor gas. In comparison with the conventional focused ion beam that is applied for fabricating a dot-like nano-structure the method is more simplified and easy to be achieved.