The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Feb. 28, 2006
Ki Vin Im, Seoul, KR;
Jae Hyun Yeo, Bucheon-si, KR;
Kyoung Ryul Yoon, Koyang, KR;
Jong Cheol Lee, Seoul, KR;
Eun AE Chung, Suwon, KR;
Young Sun Kim, Suwon, KR;
Ki Vin Im, Seoul, KR;
Jae Hyun Yeo, Bucheon-si, KR;
Kyoung Ryul Yoon, Koyang, KR;
Jong Cheol Lee, Seoul, KR;
Eun Ae Chung, Suwon, KR;
Young Sun Kim, Suwon, KR;
Samsung Electronics Co., Ltd, Suwon-si, KR;
Abstract
A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.