The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jul. 18, 2007
Tony Phan, Flower Mound, TX (US);
Kyle M. Flessner, Richardson, TX (US);
Martin B. Mollat, McKinney, TX (US);
Connie Wang, Plano, TX (US);
Arthur Pan, Plano, TX (US);
Eric William Beach, Tucson, AZ (US);
Michelle R. Keramidas, Garland, TX (US);
Karen Elizabeth Burks, Richardson, TX (US);
Tony Phan, Flower Mound, TX (US);
Kyle M. Flessner, Richardson, TX (US);
Martin B. Mollat, McKinney, TX (US);
Connie Wang, Plano, TX (US);
Arthur Pan, Plano, TX (US);
Eric William Beach, Tucson, AZ (US);
Michelle R. Keramidas, Garland, TX (US);
Karen Elizabeth Burks, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.