The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Aug. 06, 2007
Chan Bae Kim, Gyeonggi-do, KR;
Jong Min Lee, Gyeonggi-do, KR;
Chae O Chung, Gyeonggi-do, KR;
Hyeon Ju an, Gyeonggi-do, KR;
Hyo Seok Lee, Gyeonggi-do, KR;
Sung Kyu Min, Seoul, KR;
Chan Bae Kim, Gyeonggi-do, KR;
Jong Min Lee, Gyeonggi-do, KR;
Chae O Chung, Gyeonggi-do, KR;
Hyeon Ju An, Gyeonggi-do, KR;
Hyo Seok Lee, Gyeonggi-do, KR;
Sung Kyu Min, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.