The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Aug. 25, 2006
Paul Ferreira, Barraux, FR;
Paul Ferreira, Barraux, FR;
STMicroelectronics (Crolles 2) SAS, Crolles Cedex, FR;
Abstract
A gate of a transistor in an integrated circuit is protected against the production of an interconnection terminal for a source/drain region. The transistor includes a substrate, at least one active zone formed in the substrate, at least one insulating zone formed in the substrate and a gate, the gate being formed above an active zone. A dielectric layer is formed on the transistor, the dielectric layer covering the gate. The dielectric layer is then etched while leaving it remaining at least on the gate so that the gate is electrically insulated from other elements formed above the dielectric layer. This etching is preferably carried out using a mask which was used for fabricating the gate and a mask which was used for fabricating the insulating zone.