The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Nov. 21, 2008
Koichi Nagasawa, Aichi, JP;
Takashi Yamaguchi, Aichi, JP;
Nobutaka Ozaki, Aichi, JP;
Yasuhiro Kanaya, Tokyo, JP;
Hirohisa Takeda, Aichi, JP;
Yasuo Mikami, Aichi, JP;
Yoshifumi Mutoh, Aichi, JP;
Koichi Nagasawa, Aichi, JP;
Takashi Yamaguchi, Aichi, JP;
Nobutaka Ozaki, Aichi, JP;
Yasuhiro Kanaya, Tokyo, JP;
Hirohisa Takeda, Aichi, JP;
Yasuo Mikami, Aichi, JP;
Yoshifumi Mutoh, Aichi, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing an electronic apparatus having a resist pattern provided over a substrate provided with a thin film transistor, the method includes the steps of forming by application a resist film over the substrate in the state of covering the thin film transistor, forming a resist pattern by subjecting the resist film to exposure to light and a developing treatment, and irradiating the resist pattern with at least one of ultraviolet light and visible light in a dry atmosphere in the condition where a channel part of the thin film transistor is prevented from being irradiated with light having a wavelength of shorter than 260 nm, wherein a step of heat curing the resist pattern is conducted after the irradiation with at least one of ultraviolet light and visible light.