The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
May. 12, 2008
Eiji Kamiyama, Chiba-ken, JP;
Seiichi Nakamura, Chiba, JP;
Tetsuya Nakai, Chiba, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.