The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 29, 2009
Masaharu Kinoshita, Kokubunji, JP;
Motoyasu Terao, Hinode, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Yoshitaka Sasago, Tachikawa, JP;
Yoshinobu Kimura, Tokyo, JP;
Akio Shima, Hino, JP;
Mitsuharu Tai, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Masaharu Kinoshita, Kokubunji, JP;
Motoyasu Terao, Hinode, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Yoshitaka Sasago, Tachikawa, JP;
Yoshinobu Kimura, Tokyo, JP;
Akio Shima, Hino, JP;
Mitsuharu Tai, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.