The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jul. 12, 2005
Radu Surdeanu, Heverlee, BE;
Prabhat Agarwal, Brussels, BE;
Abraham Rudolf Balkenende, Heeze, NL;
Erik P. A. M. Bakkers, Heeze, NL;
Radu Surdeanu, Heverlee, BE;
Prabhat Agarwal, Brussels, BE;
Abraham Rudolf Balkenende, Heeze, NL;
Erik P. A. M. Bakkers, Heeze, NL;
NXP B.V., Eindhoven, NL;
Abstract
A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source () and drain () regions are formed of nanowire ania the channel region () is in the form of a nanotube. An insulated gate () is provided adjacent to the channel region () for controlling conduction i ni the channel region between the source and drain regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile