The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Jan. 13, 2009
Hirokazu Sekine, Kanagawa-ken, JP;
Shu Sasaki, Iwate-ken, JP;
Hirokazu Sekine, Kanagawa-ken, JP;
Shu Sasaki, Iwate-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes steps of forming an embedded channelin a semiconductor substrateforming a resist layer on the embedded channelthrough an oxide film, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity regionhaving a concentration gradient by injecting ions into the embedded channelthrough the resist mask, and arranging transfer electrodesat prescribed positions on the first impurity regionthrough the oxide filmafter removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.