The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Dec. 23, 2008
Akiko Suzuki, Tokyo, JP;
Shinetsu Fujieda, Kawasaki, JP;
Tatsuoki Kono, Tokyo, JP;
Toshihide Takahashi, Yokohama, JP;
Kazuaki Ootsuka, Yokosuka, JP;
Hiroaki Oshio, Yokohama, JP;
Hideo Tamura, Yokohama, JP;
Akiko Suzuki, Tokyo, JP;
Shinetsu Fujieda, Kawasaki, JP;
Tatsuoki Kono, Tokyo, JP;
Toshihide Takahashi, Yokohama, JP;
Kazuaki Ootsuka, Yokosuka, JP;
Hiroaki Oshio, Yokohama, JP;
Hideo Tamura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.